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PhD position (m/f/d) for the quantum transport characterization of SiGebased devices
Arbeitgeber: IHP GmbH - Leibniz-Institut für innovative Mikroelektronik
Kurzinfo
- Tätigkeitsfeld
- Wissenschaft und Technik
- Ort
- Frankfurt (Oder)
Karte anschauen - Bewerbungsfrist
- 31.08.2025
- Laufbahn / Entgeltgruppe
- Gehobener Dienst
- Kontakt
-
Marvin Zöllner
Mailkontakt
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Tätigkeitsprofil:
The position:
As a PhD student and member of the research group "Semiconductor Quantum Materials" within the department "Materials Research" you will contribute to the field of group IV semiconductor integration into state-of-the-art CMOS technology. You will join our team in developing strategies to optimize materials and fabrication processes for the application in gate-defined quantum dot spin qubits. Your work will focus on characterizing the electrical transport properties of devices at cryogenic temperatures down to 100 mK and in magnetic fields of up to 12 T. Our international research team, comprising both experienced scientists and enthusiastic PhD students, is excited to
welcome you. We value the diversity of perspectives and are proud of the balanced gender representation within our group, which we see as a strength that enriches our collaborative work.
Your PhD project:
Your project focuses on optimizing Si/SiGe and Ge/SiGe-based field-effect stacks for use in gate-defined quantum dot spin qubits for quantum computing applications. To achieve this, you will primarily investigate two-dimensional
carrier systems confined in Si or Ge quantum wells at cryogenic temperatures, using magnetotransport measurements on Hall bar–shaped field-effect transistors. These devices are fabricated in IHP’s 200 mm BiCMOS
pilot line. Based on key figures of merit related to 2D carrier system quality, you will provide feedback to guide the optimization of heterostructure growth and device fabrication processes.
In collaboration with the team, you will contribute to the development of strategies for improving the field-effect stack and support the advancement of nanostructured quantum devices. In the final phase of the project, you will
learn to characterize quantum dot devices for spin qubit applications and contribute to further technological innovations in this field.
Anforderungsprofil:
Your qualifications:
You hold a Master’s degree in physics, electrical engineering, semiconductor technology, or a related field. Ideally, you have a solid foundation in semiconductor technology and device physics, along with hands-on experience in
electrical characterization and/or device fabrication. A background in semiconductor material growth and characterization highly desirable. Proficiency in data analysis using tools such as Python, MATLAB, or similar software
is expected.
We are looking for a strong team player who can plan and execute work independently while contributing effectively in a collaborative research environment. You will thrive in this position if you bring a combination of experimental
expertise, analytical thinking, and problem-solving ability. Strong communication skills, a quick grasp of new tools and technologies and, above all, an independent and curious mindset will make you an ideal fit for our team. As IHP
is an international research center, it is necessary that you are fluent in English. German language skills are welcome.
The improvement of German language skills is expected and strongly encouraged, e.g. through in-house language courses and intensive courses.
Weitere Informationen
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